Nonvolatile memory cell for eeprom including a floating gate to drain tunnel area positioned away from the channel region to prevent trapping of electrons in the gate oxide during cell erase
US4894802A · kind A · utility
21Cited by
3References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 2, 1988 |
| Grant date | Jan 16, 1990 |
| Priority date | — |
| Expiry date | Feb 2, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/685
Abstract
Disclosed is a nonvolatile memory cell which utilizes a tunnel window to discharge the floating gate at a location spacially displaced from the program path for the cell. Also disclosed is a process for making such a memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.