Patent assignee · US · COMPANY

Catalyst Semiconductor, Inc.

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40Patents
5Active
40Granted
41Portfolio score

Filing activity: Jan 25, 1988 → Oct 30, 2007 · 5 expiring within 5 years

Most-cited patents

PatentTitleAreaCited byStatus
US4949309A EEPROM utilizing single transistor per cell capable of both byte erase and flash erase Physics 106 Expired
US6518737B1 Low dropout voltage regulator with non-miller frequency compensation Physics 85 Expired
US5793079A Single transistor non-volatile electrically alterable semiconductor memory device Physics 81 Expired
US5400286A Self-recovering erase scheme to enhance flash memory endurance Physics 79 Expired
US5185718A Memory array architecture for flash memory Physics 61 Expired
US5216588A Charge pump with high output current Electricity 59 Expired
US5313429A Memory circuit with pumped voltage for erase and program operations Physics 53 Expired
US7324380B2 Method for trimming the temperature coefficient of a floating gate voltage reference Physics 47 Active
US6710583B2 Low dropout voltage regulator with non-miller frequency compensation Physics 45 Expired
US4861730A Process for making a high density split gate nonvolatile memory cell Emerging Cross-Sectional Technologies 44 Expired
US5796941A Method for supervising software execution in a license restricted environment Physics 43 Expired
US5033023A High density EEPROM cell and process for making the cell Electricity 36 Expired
US7323828B2 LED current bias control using a step down regulator Electricity 33 Expired
US5783471A Structure and method for improved memory arrays and improved electrical contacts in semiconductor devices Emerging Cross-Sectional Technologies 30 Expired
US5519239A Structure and method for improved memory arrays and improved electrical contacts in semiconductor devices Emerging Cross-Sectional Technologies 30 Expired
US7323742B2 Non-volatile memory integrated circuit Electricity 27 Expired
US4811191A CMOS rectifier circuit Electricity 22 Expired
US4894802A Nonvolatile memory cell for eeprom including a floating gate to drain tunnel area positioned away from the channel region to prevent trapping of electrons in the gate oxide during cell erase Electricity 21 Expired
US6970037B2 Programmable analog bias circuits using floating gate CMOS technology Physics 21 Expired
US6865113B2 System and method for programming non-volatile memory Physics 21 Expired
US5764586A Intermediate size non-volatile electrically alterable semiconductor memory device Physics 16 Expired
US4903237A Differential sense amplifier circuit for high speed ROMS, and flash memory devices Physics 15 Expired
US5218235A Power stealing circuit Electricity 15 Expired
US7557641B2 Fractional charge pump for step-down DC-DC converter Electricity 11 Active
US5543668A Charge stacking on-chip high-voltage generator and method Physics 10 Expired

Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.