Adjustable windage method and mask for correction of proximity effect in submicron photolithography

US4895780A · kind A · utility

Assignee

• General Electric Company · US

Inventors

• Yoav Nissan-Cohen · Zichron Ya'akov, IL
• Paul Frank · Albany, US
• Joseph M. Pimbley · Schenectady, US
• Dale M. Brown · Schenectady, US
• Ernest Wayne Balch · Malta, US
• Kenneth J. Polasko · Latham, US

Key dates

• Filing date: Oct 25, 1988
• Grant date: Jan 23, 1990
• Expiry date: Oct 25, 2008

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F1/36
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

In order to solve the problem of the proximity effects which occurs in the fabrication of integrated circuit devices, a facile method is provided for automatically creating a new pattern in which variably spaced windage correction is applied over the mask. This permits the utilization of conventional design fabrication rules and systems without the concomitant problem of producing small feature sizes in isolated structures. The method produces highly desirable chip masks and is readily implemented on commercially available CAD systems presently being employed for the production of circuit masks. The method is automatic and extremely easily implemented.