Active up-pump for semiconductor sense lines
US4897568A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 1988 |
| Grant date | Jan 30, 1990 |
| Priority date | — |
| Expiry date | Sep 30, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/01742
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A pumpdown circuit uses voltage sensing to bring a low node to a potential of V.sub.SS +V.sub.T by first grounding the node and then floating the node to the V.sub.SS +V.sub.T potential. When a sensing node is at the V.sub.SS +V.sub.T potential, the sensing node is maintained at a level above ground by leakage current through a pump-up circuit. Biasing the digit and digit* lines to a potential V.sub.T above ground reduces current (amperage) requirement, because the digit and digit* lines do not have to be discharged completely to ground. The momentary discharge of the sense amp node to ground allows the sense amp to behave like a conventional sense amp during initial sensing, thereby allowing a minimum digit/digit* sensing potential to approximate ground plus V.sub.T.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.