Horizontal structure thin film transistor
US4897698A · kind A · utility
11Cited by
14References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 14, 1988 |
| Grant date | Jan 30, 1990 |
| Priority date | — |
| Expiry date | Dec 14, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76281
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A horizontal structure transistor is fabricated in a shallow epitaxial island which is completely surrounded by an insulator, such as oxide. The transistor has base and emitter regions which are diffused into the island from the same mask so that the base width is controllable and remains constant with respect to the emitter. A polysilicon base contact rests on top of the island and is isolated from the emitter and collector regions by an oxide layer. The horizontal structure transistor can easily be fabricated to include complementary bipolar transistors and complementary IGFET devices on the same substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.