Semiconductor device
US4897710A · kind A · utility
54Cited by
11References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 18, 1987 |
| Grant date | Jan 30, 1990 |
| Priority date | — |
| Expiry date | Aug 18, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The semiconductor device comprises a silicon substrate, a boron-doped high resistant silicon carbide layer that is formed on the silicon substrate and a silicon carbide layer formed on the high resistant silicon carbide layer. The silicon carbide layer that is formed on the high resistant silicon carbide layer provides an electrical insulation for the device so that improved device characteristics are obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.