Method for fabricating hybrid integrated circuit
US4898805A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 25, 1988 |
| Grant date | Feb 6, 1990 |
| Priority date | — |
| Expiry date | Jul 25, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/0347
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a hybrid IC substrate comprises the steps of baking a conductor of a first group on an insulating ceramic substrate, forming an insulating porous active layer including a glass component and a small amount of a metal component having a catalytic action for electroless plating, forming a resist pattern on the active layer by using a photomask, and forming a conductor of a second group by electroless plating on a portion of the active layer not covered with the resist, whereby a portion of the active layer sandwiched between the conductors of the first and second groups is rendered conductive and a portion of the active layer in direct contact with the insulating substrate is maintained as an insulator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.