Structure for fast-recovery bipolar devices
US4901120A · kind A · utility
17Cited by
6References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 10, 1987 |
| Grant date | Feb 13, 1990 |
| Priority date | — |
| Expiry date | Jun 10, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/121
Abstract
A bipolar junction structure comprising a Schottky barrier rectifying contact juxtaposed to a p-n junction having the distribution of p+ diffusions common to a guard ring structure on the Schottky barrier area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.