Method for selectively depositing tungsten on a substrate by using a spin-on metal oxide
US4902533A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 19, 1987 |
| Grant date | Feb 20, 1990 |
| Priority date | — |
| Expiry date | Jun 19, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28562
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for selectively depositing a metal such as tungsten on a substrate material is provided. In one form, a layer of insulating material such as silicon dioxide is formed on the substrate. A layer of either aluminum oxide or titanium oxide is then formed over the substrate by a spin-on technique. A straight-wall contact region to the substrate is formed and tungsten may then be quickly and selectively formed in the contact region only with chemical vapor deposition at a high pressure. In another form, the aluminum oxide or titanium oxide layer may be thickly formed directly above the substrate without the silicon dioxide layer being formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.