Monitoring the fabrication of semiconductor devices by photon induced electron emission
US4902631A · kind A · utility
19Cited by
9References
12Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 28, 1988 |
| Grant date | Feb 20, 1990 |
| Priority date | — |
| Expiry date | Oct 28, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/051
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Gas phase processes such as plasma etching of a semiconductor substrate is monitored by utilizing the optogalvanic effect. The substrate is subjected to light and in response emits an electron current whose magnitude is representative of the composition at the surface of the substrate. The monitored current is a sensitive indication of surface contamination and of compositional changes associated with the gas phase procedure. The technique is effectively utilized in fabricating devices such as semiconductor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.