Schottky barrier diode for alpha particle resistant static random access memories
US4903087A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 1988 |
| Grant date | Feb 20, 1990 |
| Priority date | — |
| Expiry date | Dec 20, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/60
Abstract
An improved Schottky barrier diode for increasing the alpha particle resistance of static random access memories includes an extra implanted N-type region at the surface of the epitaxial layer to increase the impurity concentration there to about 1.times.10.sup.19 atoms per cubic centimeter. In one device, arsenic is employed to overcompensate a guard ring where the Schottky diode is to be formed, while in another device phosphorus is employed and the guard ring is not overcompensated. The resulting Schottky diodes, when employed in the static random access memory cells, dramatically increase the alpha particle resistance of such cells, while also substantially decreasing the access time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.