Rick C. Jerome
26Patents
10h-index
31Co-inventors
75Inventor score
Filing activity: Dec 20, 1988 → Jun 21, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5344785A | Method of forming high speed, high voltage fully isolated bipolar transistors on a SOI substrate | Emerging Cross-Sectional Technologies | 37 | Expired |
| US5338696A | Method of fabricating BiCMOS device | Emerging Cross-Sectional Technologies | 30 | Expired |
| US5436496A | Vertical fuse device | Electricity | 27 | Expired |
| US5561073A | Method of fabricating an isolation trench for analog bipolar devices in harsh environments | Electricity | 26 | Expired |
| US5107321A | Interconnect method for semiconductor devices | Electricity | 24 | Expired |
| US5231042A | Formation of silicide contacts using a sidewall oxide process | Emerging Cross-Sectional Technologies | 20 | Expired |
| US5139961A | Reducing base resistance of a BJT by forming a self aligned silicide in the single crystal region of the extrinsic base | Emerging Cross-Sectional Technologies | 20 | Expired |
| US5661046A | Method of fabricating BiCMOS device | Emerging Cross-Sectional Technologies | 15 | Expired |
| US5338694A | Method of fabricating BiCMOS device | Emerging Cross-Sectional Technologies | 13 | Expired |
| US9570494B1 | Method for forming a semiconductor image sensor device | Electricity | 10 | Active |
| US6069078A | Multi-level interconnect metallization technique | Electricity | 9 | Expired |
| US5525533A | Method of making a low voltage coefficient capacitor | Emerging Cross-Sectional Technologies | 9 | Expired |
| US5139966A | Low resistance silicided substrate contact | Electricity | 7 | Expired |
| US4903087A | Schottky barrier diode for alpha particle resistant static random access memories | Electricity | 6 | Expired |
| US5565370A | Method of enhancing the current gain of bipolar junction transistors | Emerging Cross-Sectional Technologies | 6 | Expired |
| US5298440A | Method of fabrication of transistor device with increased breakdown voltage | Emerging Cross-Sectional Technologies | 5 | Expired |
| US8476150B2 | Methods of forming a semiconductor device | Electricity | 5 | Active |
| US5420050A | Method of enhancing the current gain of bipolar junction transistors | Emerging Cross-Sectional Technologies | 5 | Expired |
| US5493149A | Transistor device with increased breakdown voltage | Emerging Cross-Sectional Technologies | 5 | Expired |
| US8815641B2 | Diamond SOI with thin silicon nitride layer and related methods | Electricity | 4 | Active |
| US5350942A | Low resistance silicided substrate contact | Electricity | 3 | Expired |
| US5670394A | Method of making bipolar transistor having amorphous silicon contact as emitter diffusion source | Emerging Cross-Sectional Technologies | 1 | Expired |
| US11756977B2 | Backside illumination image sensors | Electricity | 0 | Active |
| US9711556B2 | Semiconductor image sensor structure having metal-filled trench contact | Electricity | 0 | Active |
| US8691670B2 | Methods of forming a semiconductor device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.