Semiconductor component with contact hole

US4903112A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Helmut Strack · Hersbruck, DE
• Gottfried Schuh · Munich, DE

Key dates

• Filing date: Jun 22, 1988
• Grant date: Feb 20, 1990
• Expiry date: Jun 22, 2008

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S257/914
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor component. The semiconductor component has two superimposed semiconductor layers of different conduction materials. An upper layer is provided with an opening through which a lower layer is exposed. A space saving scheme for connecting electrically the two layers is provided, by depositing a connecting layer which contacts the upper layer at an edge only and the lower layer is contacted at its depth where its doping material maximum is located. This requires a doping equal to or greater than 10.sup.19 cm.sup.-3 for the upper layer, which is dependent on thickness.