Semiconductor element
US4905072A · kind A · utility
25Cited by
9References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 29, 1988 |
| Grant date | Feb 27, 1990 |
| Priority date | — |
| Expiry date | Apr 29, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprises a semiconductor layer of a polycrystalline silicon thin film containing not more than 3 atomic % hydrogen atoms and having a surface unevenness of not more than 800 .ANG. at its maximum. It may also have an etching rate of 20 .ANG./sec. when etched with a mixture of HF, HNO.sub.3 and glacial acetic acid (1:3:6).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.