Monolithically integrated bidirectional lateral semiconductor device with insulated gate control in both directions and method of fabrication
US4912541A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 19, 1987 |
| Grant date | Mar 27, 1990 |
| Priority date | — |
| Expiry date | May 19, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D18/655
Abstract
A monolithically integrated reverse conducting lateral insulated gate semiconductor device includes an inherent four layer structure which supplies a sufficient base drive to turn on an inherent lateral transistor under forward bias conditions. Under reverse bias conditions, an inherent five layer structure is activated to provide for high current density low voltage reverse conduction in the device. Forward and reverse current flow can be interrupted by the application of an appropriate bias to the same insulated gate electrode. The disclosed semiconductor device achieves improved current density and concomitantly reduced cell size.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.