Stacked multi-polysilicon layer capacitor
US4914546A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Feb 3, 1989 |
| Grant date | Apr 3, 1990 |
| Priority date | — |
| Expiry date | Feb 3, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
Abstract
A multilayer polysilicon structure is formed, where the various polysilicon layers and a conductive diffused region form plates of stacked capacitors, and electrodes contact each of the capacitor plates. The resulting capacitor structure inherently forms a series connected capacitor structure where each capacitor shares a plate with an adjacent capacitor. The structure is well suited for use in a voltage multiplier where each capacitor is charged to the supply voltage with the total voltage across the series connected capacitors being a multiple of the supply voltage. The dielectric layer between each of the polysilicon layers and between the first polysilicon layer and the diffused region may be nitride, oxide, or a combination of both.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.