Thin film solar cell and method of making
US4915745A · kind A · utility
173Cited by
7References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 22, 1988 |
| Grant date | Apr 10, 1990 |
| Priority date | — |
| Expiry date | Sep 22, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/541
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A structure for, and method of making, thin films of Group I-III-VI compound semiconductors such as copper indium diselenide for use in heterojunction photovoltaic devices fabricated on metal substrates. An interfacial film containing gallium is first deposited upon the substrate. Thereafter, copper and indium films are deposited and the resulting stacked film is heated in the presence of a source of selenium to form copper indium diselenide semiconductor material with improved adhesion to the substrate and improved performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.