MOS power structure with protective device against overvoltages and manufacturing process therefor
US4916085A · kind A · utility
27Cited by
4References
2Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 15, 1989 |
| Grant date | Apr 10, 1990 |
| Priority date | — |
| Expiry date | Jun 15, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/601
Abstract
A MOS power structure made up of at least one MOS cell with gate electrode, drain electrode, source electrode, well-region and of a bi-polar parasitic transistor provided with a protective device for the gate and drain against overvoltages. The protective device consists of a further bi-polar transistor with optional addition of a zener diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.