Amorphous silicon thin film transistor and method of manufacturing the same
US4916090A · kind A · utility
35Cited by
7References
11Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Mar 13, 1989 |
| Grant date | Apr 10, 1990 |
| Priority date | — |
| Expiry date | Mar 13, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/034
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a amorphous silicon thin film transistor comprises exposing an morphous silicon layer situated between a source electrode and a drain electrode to a gas phase atmosphere having a gas containing an impurity forming an acceptor, then activating said impurity with an electric field or light energy and doping the activated impurity into said amorphous silicon layer. The gas may be a hydrogen compound and it may include an oxidizing gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.