Nippon Precision Circuits Inc.
107Patents
2Active
107Granted
42Portfolio score
Filing activity: Feb 28, 1983 → Oct 3, 2005 · 2 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5577331A | Downflow spin dryer | Mechanical Engineering; Lighting; Heating | 503 | Expired |
| US5789947A | Phase comparator | Electricity | 73 | Expired |
| US5398029A | Sampling rate converter | Physics | 57 | Expired |
| US6515522B2 | Drive circuit of capacitive load and integrated circuit for driving capacitive load | Physics | 43 | Expired |
| US5309026A | Integrated circuit package having stress reducing recesses | Electricity | 43 | Expired |
| US5384274A | Method of making a combined semiconductor device and inductor | Electricity | 42 | Expired |
| US5071779A | Method for producing a silicon thin film transistor | Electricity | 36 | Expired |
| US4916090A | Amorphous silicon thin film transistor and method of manufacturing the same | Emerging Cross-Sectional Technologies | 35 | Expired |
| US6556094B2 | Oscillator circuit and integrated circuit for oscillation | Electricity | 29 | Expired |
| US6788159B2 | Temperature compensated oscillator, adjusting method thereof, and integrated circuit for temperature compensated oscillator | Electricity | 28 | Expired |
| US5053354A | Method of fabricating a reverse staggered type silicon thin film transistor | Electricity | 28 | Expired |
| US6437608B1 | Sample-and-hold circuit and A/D converter | Physics | 26 | Expired |
| US6344812B1 | Delta sigma digital-to-analog converter | Electricity | 26 | Expired |
| US6218878A | D-type flip-flop circiut | Electricity | 25 | Expired |
| US6898105B2 | Ferroelectric non-volatile memory device having integral capacitor and gate electrode, and driving method of a ferroelectric non-volatile memory device | Physics | 23 | Expired |
| US6559698B1 | Spread spectrum type clock generating circuit | Electricity | 23 | Expired |
| US5111261A | Silicon thin film transistor with an intrinsic silicon active layer formed within the boundary defined by the edges of the gate electrode and the impurity containing silicon layer | Electricity | 22 | Expired |
| US5773861A | Single transistor E.sup.2 PROM memory device | Electricity | 21 | Expired |
| US5021850A | Silicon thin film transistor | Electricity | 21 | Expired |
| US6670854B2 | Fractional-N frequency synthesizer and method of operating the same | Emerging Cross-Sectional Technologies | 20 | Expired |
| US6025757A | Piezoelectric oscillator circuit | Electricity | 20 | Expired |
| US5727085A | Waveform data compression apparatus | Physics | 20 | Expired |
| US6025756A | Oscillation circuit | Electricity | 19 | Expired |
| US5523712A | Resistor array circuit device and variable gain device utilizing same | Electricity | 19 | Expired |
| US5442210A | Semiconductor device | Electricity | 18 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.