Semiconductor laser device
US4916709A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 1989 |
| Grant date | Apr 10, 1990 |
| Priority date | — |
| Expiry date | Mar 13, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32316
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device includes an active layer, a pair of different conductivity type cladding layers having a wider energy band gap than that of the active layer, sandwiching the active layer. One of the cladding layers has a stripe ridge or stripe groove. A high dopant concentration diffusion region having the same conductivity type as that of the cladding layer is disposed on the stripe ridge or the stripe groove. Therefore, a refractive index difference is provided in the two directions transverse to the length of the resonant cavity and a low astigmatism. Furthermore, because the light confinement is strengthened, the light emission efficiency is also enhanced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.