Tetsuya Yagi
57Patents
12h-index
78Co-inventors
87Inventor score
Filing activity: Apr 5, 1985 → Dec 18, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| USD491899S1 | Light emitting diode | General | 91 | Expired |
| USD490387S1 | Light emitting diode | General | 44 | Expired |
| USD508233S1 | Light emitting diode | General | 31 | Expired |
| US5218439A | Photo video camera device | Electricity | 30 | Expired |
| US5181220A | Semiconductor light emitting light concentration device | Electricity | 25 | Expired |
| US5789094A | Fuel cell and sealing parts therefore | Emerging Cross-Sectional Technologies | 21 | Expired |
| US5288654A | Method of making a mushroom-shaped gate electrode of semiconductor device | Emerging Cross-Sectional Technologies | 20 | Expired |
| US5616431A | Fuel cell and its bipolar plate | Emerging Cross-Sectional Technologies | 20 | Expired |
| US4964135A | Semiconductor laser | Emerging Cross-Sectional Technologies | 18 | Expired |
| US5045500A | Method of making a semiconductor laser | Emerging Cross-Sectional Technologies | 15 | Expired |
| US5363399A | Semiconductor distributed-feedback laser device | Electricity | 13 | Expired |
| US5079185A | Method of making a semiconductor laser | Emerging Cross-Sectional Technologies | 12 | Expired |
| US5061643A | Method of doping a growing crystalline semiconductor film | Emerging Cross-Sectional Technologies | 12 | Expired |
| US4984243A | Semiconductor laser device | Emerging Cross-Sectional Technologies | 11 | Expired |
| US5470767A | Method of making field effect transistor | Electricity | 11 | Expired |
| US5018158A | Semiconductor laser device | Electricity | 8 | Expired |
| US8265764B2 | Artificial vision system | Human Necessities | 7 | Expired |
| US4769342A | Method for making a semiconductor laser by cleaving a cantilever heterostructure | Emerging Cross-Sectional Technologies | 7 | Expired |
| US4916709A | Semiconductor laser device | Electricity | 7 | Expired |
| US7106775B2 | Semiconductor laser devices | Electricity | 6 | Expired |
| US4758532A | Method for making a heterostructure semiconductor laser device by pressure cleaving of a cantilever structure | Emerging Cross-Sectional Technologies | 6 | Expired |
| US5220186A | Semiconductor device with a mushroom-shaped gate electrode | Emerging Cross-Sectional Technologies | 5 | Expired |
| US4724264A | Fluoroalkoxy cyclic phosphonitrile esters | Chemistry; Metallurgy | 5 | Expired |
| USD715233S1 | Light emitting diode | General | 5 | Active |
| US7369162B2 | Image sensing apparatus | Electricity | 5 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.