PECVD (plasma enhanced chemical vapor deposition) method for depositing of tungsten or layers containing tungsten by in situ formation of tungsten fluorides

US4918033A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Johann W. Bartha · Aidlingen, DE
• Thomas Bayer · Igersheim, DE
• Johann Greschner · Neckartenzlingen, DE
• Georg Kraus · Konz, DE
• Gerhard Schmid · Mindelheim, DE

Key dates

• Filing date: Sep 1, 1988
• Grant date: Apr 17, 1990
• Expiry date: Sep 1, 2008

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S148/147
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

The invention comprises a PECVD method for the deposition of refractory metal layers or layers containing refractory metal by the in situ formation of refractory metal fluorides. For this purpose, an etch gas, such as CF.sub.4, NF.sub.3, SF.sub.6 etc., is introduced into a plasma deposition chamber which comprises a cathode, with a refractory metal sheet electrically connected thereto, and an anode carrying wafers. In a preferred example, CF.sub.6 is introduced into the chamber and, via a gas shower, into a cathode region. After ignition of a plasma, the ionized etch gas acts on a tungsten sheet, generating WF.sub.x ions that diffuse towards a target with wafers. The WF.sub.x ions thus produced are suitable for the deposition of a tungsten layer or a layer containing tungsten on silicon wafers.