Sagfet with buffer layers

US4918493A · kind A · utility

Assignee

• ITT Corporation · US

Inventors

• Arthur E. Geissberger · Roanoke, US
• Robert A. Sadler · Roanoke, US
• Gregory E. Menk · Pleasanton, US
• Matthew L. Balzan · Roanoke, US

Key dates

• Filing date: Aug 10, 1988
• Grant date: Apr 17, 1990
• Expiry date: Aug 10, 2008

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/357

Abstract

A composite buffer layer is formed with a layer of GaAs on a semi-insulating GaAs substrate. Next a short period superlattice is formed followed by another GaAs layer. A layer of GaAlAs is then provided such that the Ai content and no doping followed by an intrinsic GaAs layer. The intrinsic GaAs layer is the active layer which serves as a channel.