Semiconductor device and method of producing the same
US4918501A · kind A · utility
26Cited by
7References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 29, 1988 |
| Grant date | Apr 17, 1990 |
| Priority date | — |
| Expiry date | Dec 29, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/90
Abstract
Disclosed is a semiconductor integrated circuit device which includes first field effect transistors of an LDD structure having a floating gate as memory cells and second field effect transistors of the LDD structure as elements other than the memory cells, and which is used as EPROM. A shallow, low impurity concentration region of the first field effect transistor as a part of its source or drain region has a higher impurity concentration than a shallow, low impurity concentration region of the second field effect transistor as a part of its source or drain region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.