Active matrix cell
US4918504A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 22, 1988 |
| Grant date | Apr 17, 1990 |
| Priority date | — |
| Expiry date | Jul 22, 2008 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/13629
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An active matrix cell includes a first conductor group formed on a transparent substrate, two-layered regions consisting of a semiconductor film and a first insulating film, a second insulating film and a second conductor group. The first conductor group forms the source and drain of a thin film transistor, pixel electrode, data line. One of the two-layered regions serves as an active region of the thin film transistor and the other of the two-layered regions serves as the intersection between the data and scanning lines. The second insulating film is buried in the gap between the two-layered regions and the first conductor group, and has substantially a same thickness as the two-layered regions. The second conductor group forms the scanning line and the part of the data line. A method of manufacturing the active matrix cell is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.