Etching metal films with complexing chloride plasma

US4919750A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Robert C. Bausmith · Glastonbury, US
• William J. Cote · Poughquag, US
• John Cronin · Jericho, US
• Karey Holland · Saint Johnsbury Center, US
• Carter W. Kaanta · Colchester, US
• Pei-Ing Lee · 埔鹽鄉, TW
• Terrance M. Wright · Williston, US

Key dates

• Filing date: Apr 24, 1989
• Grant date: Apr 24, 1990
• Expiry date: Apr 24, 2009

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/32136
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method for dry etching metals that form low volatility chlordes, in which Z-Cl reaction products are controllably introduced into a conventional Cl-based plasma independent of the workpiece. The Z-Cl products (e.g., AlCl.sub.3, GaCl.sub.3, etc.) are metal chlorides that have both electron acceptor and chloride donor properties. Thus, metals M (e.g., cobalt, copper and nickel) that usually produce low volatility chlorides can be controllably complexed to form high volatility Z.sub.x Cl.sub.y M.sub.z reaction products.