Inventor · Poughquag, NY, US

William J. Cote

45Patents
25h-index
102Co-inventors
88Inventor score

Filing activity: Mar 30, 1987 → Oct 4, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US4838991A Process for defining organic sidewall structures Emerging Cross-Sectional Technologies 234 Expired
US4786360A Anisotropic etch process for tungsten metallurgy Electricity 224 Expired
US4910155A Wafer flood polishing Performing Operations; Transporting 180 Expired
US5308438A Endpoint detection apparatus and method for chemical/mechanical polishing Electricity 166 Expired
US5262354A Refractory metal capped low resistivity metal conductor lines and vias Electricity 162 Expired
US4956313A Via-filling and planarization technique Electricity 162 Expired
US5534106A Apparatus for processing semiconductor wafers Emerging Cross-Sectional Technologies 123 Expired
US4919750A Etching metal films with complexing chloride plasma Electricity 123 Expired
US7518190B2 Grounding front-end-of-line structures on a SOI substrate Electricity 92 Active
US8350583B2 Probe-able voltage contrast test structures Physics 84 Active
US5234868A Method for determining planarization endpoint during chemical-mechanical polishing Electricity 71 Expired
US5558563A Method and apparatus for uniform polishing of a substrate Performing Operations; Transporting 64 Expired
US6348076B1 Slurry for mechanical polishing (CMP) of metals and use thereof Electricity 61 Expired
US6649531B2 Process for forming a damascene structure Electricity 60 Expired
US9213060B2 Probe-able voltage contrast test structures Physics 59 Active
US9103875B2 Probe-able voltage contrast test structures Physics 58 Active
US9097760B2 Probe-able voltage contrast test structures Physics 58 Active
US6483172B1 Semiconductor device structure with hydrogen-rich layer for facilitating passivation of surface states Electricity 57 Expired
US7030031B2 Method for forming damascene structure utilizing planarizing material coupled with diffusion barrier material Electricity 53 Expired
US6375693B1 Chemical-mechanical planarization of barriers or liners for copper metallurgy Electricity 47 Expired
US6677637B2 Intralevel decoupling capacitor, method of manufacture and testing circuit of the same Emerging Cross-Sectional Technologies 46 Expired
US6812193B2 Slurry for mechanical polishing (CMP) of metals and use thereof Chemistry; Metallurgy 40 Expired
US6882015B2 Intralevel decoupling capacitor, method of manufacture and testing circuit of the same Emerging Cross-Sectional Technologies 30 Expired
US5593537A Apparatus for processing semiconductor wafers Emerging Cross-Sectional Technologies 29 Expired
US6093508A Dual damascene structure formed in a single photoresist film Electricity 27 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.