Metalorganic vapor phase epitaxial growth of group II-VI semiconductor materials
US4920068A · kind A · utility
2Cited by
7References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 2, 1986 |
| Grant date | Apr 24, 1990 |
| Priority date | — |
| Expiry date | Apr 2, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/11
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process to produce one or more Group II-VI epitazial layers over a crystalline substrate by directing flows of one or more Group II components and a Group VI metalorganic vapor to a heated substrate whereby the vapors thereby react to form the epitaxial layer(s), is improved in terms of lower reaction temperatures and higher product quality if, as the Group VI metalorganic vapor source, there is used a tellurium compound of the formula: ##STR1## wherein R.sup.1 and R.sup.2 are, independently, hydrogen or C.sub.1 -C.sub.4 alkyl, preferably, hydrogen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.