Duncan W. Brown
22Patents
16h-index
18Co-inventors
74Inventor score
Filing activity: Apr 2, 1986 → Sep 7, 2000
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6156581A | GaN-based devices using (Ga, AL, In)N base layers | Emerging Cross-Sectional Technologies | 310 | Expired |
| US5453494A | Metal complex source reagents for MOCVD | Electricity | 196 | Expired |
| US5840897A | Metal complex source reagents for chemical vapor deposition | Electricity | 190 | Expired |
| US6533874B1 | GaN-based devices using thick (Ga, Al, In)N base layers | Electricity | 145 | Expired |
| US5225561A | Source reagent compounds for MOCVD of refractory films containing group IIA elements | Electricity | 124 | Expired |
| US5280012A | Method of forming a superconducting oxide layer by MOCVD | Emerging Cross-Sectional Technologies | 101 | Expired |
| US5919522A | Growth of BaSrTiO.sub.3 using polyamine-based precursors | Chemistry; Metallurgy | 84 | Expired |
| US6126996A | Metal complex source reagents for chemical vapor deposition | Electricity | 50 | Expired |
| US4761395A | Process and composition for purifying arsine, phosphine, ammonia, and inert gases to remove Lewis acid and oxidant impurities therefrom | Chemistry; Metallurgy | 43 | Expired |
| US4853148A | Process and composition for drying of gaseous hydrogen halides | Emerging Cross-Sectional Technologies | 38 | Expired |
| US4923716A | Chemical vapor desposition of silicon carbide | Chemistry; Metallurgy | 33 | Expired |
| US5051785A | N-type semiconducting diamond, and method of making the same | Electricity | 27 | Expired |
| US4925646A | Process and composition for drying of gaseous hydrogen halides | Chemistry; Metallurgy | 26 | Expired |
| US6027547A | Fluid storage and dispensing vessel with modified high surface area solid as fluid storage medium | Performing Operations; Transporting | 21 | Expired |
| US5015411A | Process, composition, and apparatus for purifying inert gases to remove Lewis acid and oxidant impurities therefrom | Performing Operations; Transporting | 20 | Expired |
| US5312983A | Organometallic tellurium compounds useful in chemical vapor deposition processes | Chemistry; Metallurgy | 19 | Expired |
| US4983363A | Apparatus for purifying arsine, phosphine, ammonia, and inert gases to remove Lewis acid and oxidant impurities therefrom | Chemistry; Metallurgy | 12 | Expired |
| US4781900A | Process and composition for purifying arsine, phosphine, ammonia, and inert gases to remove Lewis acid and oxidant impurities therefrom | Chemistry; Metallurgy | 11 | Expired |
| US4950419A | Process, composition, and apparatus for purifying inert gases to remove lewis acid and oxidant impurities therefrom | Performing Operations; Transporting | 10 | Expired |
| US4797227A | Process and composition for purifying hydrogen selenide and hydrogen telluride, to remove moisture and oxidant impurities therefrom | Performing Operations; Transporting | 8 | Expired |
| US4865822A | Process for purifying hydrogen selenide and hydrogen telluride, to remove moisture and oxidant impurities therefrom | Performing Operations; Transporting | 5 | Expired |
| US4920068A | Metalorganic vapor phase epitaxial growth of group II-VI semiconductor materials | Emerging Cross-Sectional Technologies | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.