High temperature interconnect system for an integrated circuit
US4920071A · kind A · utility
147Cited by
9References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 18, 1987 |
| Grant date | Apr 24, 1990 |
| Priority date | — |
| Expiry date | Aug 18, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/133
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor integrated circuit device is provided with an electrical interconnect system which is stable at high temperatures. The interconnect system employs refractory metal compounds which are electrically conductive, which form stable couples with silicon and compounds thereof, and which remain stable at temperatures exceeding approximately 500.degree. C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.