Method for forming deposited film
US4921722A · kind A · utility
3Cited by
9References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 11, 1985 |
| Grant date | May 1, 1990 |
| Priority date | — |
| Expiry date | Oct 11, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for forming a deposited film by forming a gaseous atmosphere of a hydrogenated silicon compound of the general formula Si.sub.n H.sub.m wherein n is an integer of 1 or more, and m is an integer of 2 or more in a chamber housing a substrate therein and forming a deposited film containing silicon on said substrate by excitation of said compound to effect decomposition or polymerization thereof comprises introducing a gaseous radical polymerization initiator into said chamber and utilizing light energy, thereby exciting said compound to effect decomposition or polymerization thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.