Photoresist pattern fabrication employing chemically amplified metalized material
US4921778A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 29, 1988 |
| Grant date | May 1, 1990 |
| Priority date | — |
| Expiry date | Jul 29, 2008 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/265
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention is directed to a method for the formation and dry development of photoresists treated only in a thin layer (i.e., approx. 2000 Angstroms thick) so as to be treated with an organometallic material. Treatment of this thin layer of the resist formulation in the process of the present invention is preferably accomplished by the vapor phase exposure of the resist formulation to an organometallic material such as a silylating compound capable of reacting with the resist formulation. The resist formulation also contains a photoacid generator, capable of releasing an acid which either causes the hydrolysis of the exposed portions of the resist that were created with organometallic vapor, or prevents the reaction of the organometallic vapor with the exposed portion of the resist.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.