Ion beam apparatus and method of modifying substrate
US4924104A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Sep 9, 1988 |
| Grant date | May 8, 1990 |
| Priority date | — |
| Expiry date | Sep 9, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3007
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention concerns an ion beam apparatus, by means of which defects in a substrate can be recognized, and repaired under continuous control. For this purpose, the ion beam apparatus, in its beams path, after the ion source, is equipped with a mask exhibiting a preferrably circular hole and between ion source and mask with a controllable lens for the purpose of modification of the divergence angle under which the beam strikes the mask. The aperture of the mask is imaged upon the substrate. In this way the intensity of the ion beam may be varied for use in inspecting a substrate for defects and subsequently removing the detected defects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.