Apparatus for chemical vapor deposition
US4924807A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 24, 1987 |
| Grant date | May 15, 1990 |
| Priority date | — |
| Expiry date | Jul 24, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76879
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus for a chemical vapor deposition in which at least one substrate which has partially an insulating film on the surface thereof is disposed in a pressure reduced reaction chamber, the reaction chamber is provided with a nozzle for feeding a reactive gas into the reaction chamber, and a light source is provided for emitting a light beam to heat the substrate. The apparatus has provision for feeding a second gas opposite the substrate to put the reactive gas in the vicinity of the substrate surface into laminar flow. The combination of substrate heating source using infrared rays and the laminarized jet of reactive gas is utilized for maintaining the selectivity, facilitating the thin film forming reaction, and obtaining improved high reproducibility and controllability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.