Method of correcting defect in circuit pattern
US4925755A · kind A · utility
26Cited by
4References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 4, 1988 |
| Grant date | May 15, 1990 |
| Priority date | — |
| Expiry date | Feb 4, 2008 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/22
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of correcting a circuit pattern such as an X-ray mask, carried out by first preparing a circuit pattern structure where a circuit pattern on a conductive film is coated with a protective film, then forming a hole or a slit by irradiating a high-intensity focused ion beam to a dropout defective portion in the circuit pattern of the circuit pattern structure, and plating such hole or slit while utilizing the conductive film as a plating electrode, thereby forming a metal frame to correct the dropout defective portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.