Complementary metal-oxide-semiconductor transistor and one-capacitor dynamic-random-access memory cell and fabrication process therefor
US4927779A · kind A · utility
34Cited by
7References
5Claims
0Family size
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Key dates
| Filing date | Oct 27, 1989 |
| Grant date | May 22, 1990 |
| Priority date | — |
| Expiry date | Oct 27, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A complementary MOS one-capacitor dynamic RAM cell which operates with a non-boosted wordline without a threshold loss problem and which includes one storage capacitor and n- and p-type transfer devices connected to the storage capacitor which function as two complementary transistor devices having gates controlled by complementary signals on the RAM wordlines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.