Inventor · Yorktown Heights, NY, US

Nicky C. Lu

29Patents

21h-index

22Co-inventors

85Inventor score

Filing activity: Nov 19, 1984 → May 15, 2017

Most-cited inventions

Patent	Title	Area	Cited by	Status
US5021355A	Method of fabricating cross-point lightly-doped drain-source trench transistor	Electricity	168	Expired
US5107459A	Stacked bit-line architecture for high density cross-point memory cell array	Physics	128	Expired
US4881105A	Integrated trench-transistor structure and fabrication process	Electricity	89	Expired
US4649625A	Dynamic memory device having a single-crystal transistor on a trench capacitor structure and a fabrication method therefor	Electricity	88	Expired
US4922128A	Boost clock circuit for driving redundant wordlines and sample wordlines	Physics	81	Expired
US4954854A	Cross-point lightly-doped drain-source trench transistor and fabrication process therefor	Electricity	81	Expired
US4688063A	Dynamic ram cell with MOS trench capacitor in CMOS	Electricity	72	Expired
US4833516A	High density memory cell structure having a vertical trench transistor self-aligned with a vertical trench capacitor and fabrication methods therefor	Electricity	70	Expired
US4983544A	Silicide bridge contact process	Emerging Cross-Sectional Technologies	65	Expired
US4728623A	Fabrication method for forming a self-aligned contact window and connection in an epitaxial layer and device structures employing the method	Electricity	64	Expired
US4816706A	Sense amplifier with improved bitline precharging for dynamic random access memory	Physics	55	Expired
US4910709A	Complementary metal-oxide-semiconductor transistor and one-capacitor dynamic-random-access memory cell	Electricity	48	Expired
US5198995A	Trench-capacitor-one-transistor storage cell and array for dynamic random access memories	Electricity	47	Expired
US4816884A	High density vertical trench transistor and capacitor memory cell structure and fabrication method therefor	Electricity	42	Expired
US6009023A	High performance DRAM structure employing multiple thickness gate oxide	Electricity	36	Expired
US4927779A	Complementary metal-oxide-semiconductor transistor and one-capacitor dynamic-random-access memory cell and fabrication process therefor	Electricity	34	Expired
US4754433A	Dynamic ram having multiplexed twin I/O line pairs	Physics	33	Expired
US5395784A	Method of manufacturing low leakage and long retention time DRAM	Electricity	28	Expired
US6107134A	High performance DRAM structure employing multiple thickness gate oxide	Electricity	28	Expired
US4639622A	Boosting word-line clock circuit for semiconductor memory	Physics	26	Expired
US4678941A	Boost word-line clock and decoder-driver circuits in semiconductor memories	Physics	24	Expired
US4954731A	Wordline voltage boosting circuits for complementary MOSFET dynamic memories	Electricity	20	Expired
US6097641A	High performance DRAM structure employing multiple thickness gate oxide	Electricity	6	Expired
US6163047A	Method of fabricating a self aligned contact for a capacitor over bitline, (COB), memory cell	Electricity	5	Expired
US9164942B2	High speed memory chip module and electronics system device with a high speed memory chip module	Emerging Cross-Sectional Technologies	2	Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.