High power diamond traveling wave amplifier
US4929986A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 25, 1987 |
| Grant date | May 29, 1990 |
| Priority date | — |
| Expiry date | Sep 25, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/873
Abstract
An FET device especially useful in common gate amplifier circuits used as amplifiers of microwave and millimeter wave signals. The device has a diamond film layer constituting the device's channel. Device geometry is selected so that, in a common gate amplifier circuit, device input and output are impedance matched to avoid phase cancellation between input and output. In one embodiment a boron nitride layer is disposed heteroepitaxially with the diamond channel and separating the channel from the gate. In another embodiment plural such devices are yoked together integrally source to drain in such a manner that charge carriers entering the second and subsequent stages do so at maximum velocity without the need to accelerate from zero or low velocity. The resulting device has a higher power handling capacity, upper frequency range, and dynamic range.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.