Optical control of deposition of crystal monolayers
US4931132A · kind A · utility
120Cited by
9References
19Claims
0Family size
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Key dates
| Filing date | Oct 7, 1988 |
| Grant date | Jun 5, 1990 |
| Priority date | — |
| Expiry date | Oct 7, 2008 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/68
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method and apparatus for epitaxial growth of precisely one monolayer. The growth is by organometallic chemical vapor deposition in which the substrate is alternately exposed to the anion and cation of a III-V compound. During deposition of the cation, for instance Ga or Al, reflectance difference spectroscopy is performed to obtain the difference of reflected light beams polarized in orthogonal directions. A growth of a monolayer and even of a partial monolayer can be monitored in real time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.