Method and apparatus for correcting defects of X-ray mask
US4933565A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 8, 1988 |
| Grant date | Jun 12, 1990 |
| Priority date | — |
| Expiry date | Jul 8, 2008 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/22
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention relates to a method and apparatus for correcting defects of an X-ray mask which includes a focused ion beam used to irradiate at least a region having a defective portion of an X-ray mask having a protective film and eliminating the protective film; exposing a circuit pattern having a defective portion located under the region or setting this circuit pattern to the state near the exposure; detecting one of the secondary electrons, secondary ions, reflected electrons, or absorbing current generated from that region and detecting a true defective position. Then positioning the focused ion beam to the true defective position and irradiating the focused ion beam to the defective portion thereby correcting the defect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.