Negative resist with oxygen plasma resistance
US4935094A · kind A · utility
8Cited by
3References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 26, 1989 |
| Grant date | Jun 19, 1990 |
| Priority date | — |
| Expiry date | May 26, 2009 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/038
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Polymers formed from monomers such as chloromethyl styrene and trimethylgermylmethyl methacrylate form negative-acting resists that are extremely sensitive to exposure by electron beam and deep UV radiation. These materials are particularly useful in bilevel resist applications for fabricating masks or for device processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.