Semiconductor device and a method of manufacturing the same
US4937645A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 16, 1988 |
| Grant date | Jun 26, 1990 |
| Priority date | — |
| Expiry date | Mar 16, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/859
Abstract
A semiconductor device comprising n-channel MISFETs and p-channel MISFETs each having a gate electrode having side walls selectively provided with side wall insulating films, and a method of manufacturing such a semiconductor device. The side wall insulating films covering the side walls of the gate electrodes of the MISFETs are formed by etching a single insulating film, formed simultaneously over all the MISFETs in a single processing step. The length of the side wall insulating films of the gate electrode of the n-channel MISFET, along the direction of channel length, is about 0.3 .mu.m or above. The length of the side wall insulating films of the gate electrode of the p-channel MISFET, along the direction of channel length, is smaller than the length of the side wall insulating films of the n-channel MISFET.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.