Fumio Ootsuka
40Patents
14h-index
55Co-inventors
84Inventor score
Filing activity: Nov 29, 1979 → Sep 1, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10090316B2 | 3D stacked multilayer semiconductor memory using doped select transistor channel | Electricity | 451 | Active |
| US6982465B2 | Semiconductor device with CMOS-field-effect transistors having improved drain current characteristics | Electricity | 63 | Expired |
| US4291749A | Method and apparatus for controlling compartment temperature of a vehicle | Performing Operations; Transporting | 57 | Expired |
| US6613634B2 | Method of manufacturing a semiconductor device using oblique ion injection | Electricity | 52 | Expired |
| US4937645A | Semiconductor device and a method of manufacturing the same | Electricity | 44 | Expired |
| US5512502A | Manufacturing method for semiconductor integrated circuit device | Emerging Cross-Sectional Technologies | 30 | Expired |
| US5202275A | Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same | Emerging Cross-Sectional Technologies | 27 | Expired |
| US5329138A | Short channel CMOS device capable of high performance at low voltage | Electricity | 24 | Expired |
| US7042051B2 | Semiconductor device including impurity layer having a plurality of impurity peaks formed beneath the channel region | Electricity | 22 | Expired |
| US5331191A | Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same | Emerging Cross-Sectional Technologies | 22 | Expired |
| US6524903B2 | Method of manufacturing a semiconductor device having two peaks in an impurity concentration distribution | Electricity | 21 | Expired |
| US5309392A | Semiconductor IC device using ferroelectric material in data storage cells with light assisted state transition | Electricity | 19 | Expired |
| US5798551A | Semiconductor integrated circuit device and method of manufacturing the same | Emerging Cross-Sectional Technologies | 18 | Expired |
| US5780882A | Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same | Emerging Cross-Sectional Technologies | 14 | Expired |
| US4456055A | Automotive air conditioner having coating power control device | Mechanical Engineering; Lighting; Heating | 14 | Expired |
| US5739589A | Semiconductor integrated circuit device process for fabricating the same and apparatus for fabricating the same | Emerging Cross-Sectional Technologies | 11 | Expired |
| US6806128B2 | Semiconductor integrated circuit device and a method of manufacturing the same | Electricity | 8 | Expired |
| US7041549B2 | Method for manufacturing semiconductor device | Electricity | 8 | Expired |
| US4486837A | Apparatus for controlling operation of automobile air conditioner | Performing Operations; Transporting | 7 | Expired |
| US4463801A | Air induction control system for vehicle air conditioners | Performing Operations; Transporting | 7 | Expired |
| US6127255A | Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same | Emerging Cross-Sectional Technologies | 7 | Expired |
| US6847093B2 | Semiconductor integrated circuit device | Electricity | 7 | Expired |
| US6635937B2 | Semiconductor integrated circuit device | Electricity | 7 | Expired |
| US6169324A | Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same | Emerging Cross-Sectional Technologies | 7 | Expired |
| US5557147A | Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same | Emerging Cross-Sectional Technologies | 5 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.