RF induction heating apparatus for floating-zone melting
US4942279A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 20, 1989 |
| Grant date | Jul 17, 1990 |
| Priority date | — |
| Expiry date | Dec 20, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1088
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An RF induction heating apparatus for manufacturing single-crystal semiconductors having large diameters using the floating-zone melting process is provided in which a single turn induction heating coil suitable for zone melting and another heating coil suitable for controlling single-crystal growth are concentrically or eccentrically positioned to surround an outer surface of a floating zone in a crystalline semiconductor rod. Either the upper or lower peripheral edge of the outer surface of the single-turn induction heating coil is surrounded by and coupled to a annular collar, while both ends of the collar are arranged opposite each other across a gap. At least one conductive sector plate is affixed to a coil lower surface opposite a region of the semiconductor to be heated, so that even if both ends of the coil are spaced apart from each other due to the presence of a supply tube or the like, any gap between the two ends is shielded by the conductive sector plate(s).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.