Thin film semiconductor device and method of manufacturing the same
US4942441A · kind A · utility
89Cited by
4References
13Claims
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Key dates
| Filing date | Mar 27, 1987 |
| Grant date | Jul 17, 1990 |
| Priority date | — |
| Expiry date | Mar 27, 2007 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2202/104
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Complementary thin fillm transistors (C-TFT) formed on an insulating substrate, comprising a pair of highly resistive n-type silicon islands, a pair of heavily doped n-type regions formed in one of the islands to form source and drain regions of n-channel TFT, a pair of contacts formed on the surface of the other island and establishing a high potential barrier when the underlying region is of n-type and a low potential barrier when the underlying region is inverted to be of p-type. The process for manufacturing complementary TFTs can be simplified significantly.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.