High sensitivity mid and deep UV resist
US4943511A · kind A · utility
28Cited by
6References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 6, 1989 |
| Grant date | Jul 24, 1990 |
| Priority date | — |
| Expiry date | Jul 6, 2009 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0236
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Positive photoresist compositions are provided which contain (a) a mixture of mono-, di-, and triesters of 2,3,4-trihydroxybenzophenone and 1,2-naphthoquinone-2-diazo-4-sulfonic acid and (b) a novolak resin selected from resins prepared from a phenolic component having a high p-cresol content or from a mixture of formaldehyde and an aromatic aldehyde.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.