Thin film semiconductor device and method of fabricating the same
US4943837A · kind A · utility
107Cited by
2References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 10, 1988 |
| Grant date | Jul 24, 1990 |
| Priority date | — |
| Expiry date | Mar 10, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/958
Abstract
A thin film transistor and a method of fabricating the transistor are disclosed. The gate electrode of this thin film transistor is made small in thickness so that active hydrogen for hydrogenating passivation can penetrate in a surface layer of channel region having substantially uniform thickness, through the gate electrode. Thus, hydrogenation can be effectively carried out for the thin film transistor, independently of the length of a channel formed in the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.