Method of forming borderless contacts

US4944682A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• John Cronin · Jericho, US
• Susan Cronin · Saint Albans, US
• Carter W. Kaanta · Colchester, US
• Charles W. Koburger, III · Delmar, US
• Stephen E. Luce · Underhill, US
• Dale J. Pearson · Carmel, US

Key dates

• Filing date: Dec 21, 1989
• Grant date: Jul 31, 1990
• Expiry date: Dec 21, 2009

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76802
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of forming semi-conductor devices components wherein there are at least two exposed conducting regions having passivating material overlying said regions. The passivating material is subject to etching by a given etchant. At least one, but less than all of the regions are covered with a material, preferably an electrical conducting material, which also preferably covers additional electrical conducting or semi-conducting regions. Thereafter, all the regions are subjected to the given etchant, but only those regions having the passivating material not covered with the etch resistant material are removed. Preferably, at this point, a layer of conducting material is deposited over all the regions.