Stephen E. Luce
67Patents
16h-index
61Co-inventors
87Inventor score
Filing activity: Dec 21, 1989 → Nov 10, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5219788A | Bilayer metallization cap for photolithography | Emerging Cross-Sectional Technologies | 286 | Expired |
| US7193423B1 | Wafer-to-wafer alignments | Electricity | 204 | Expired |
| US5985762A | Method of forming a self-aligned copper diffusion barrier in vias | Electricity | 197 | Expired |
| US6153043A | Elimination of photo-induced electrochemical dissolution in chemical mechanical polishing | Electricity | 82 | Expired |
| US5654221A | Method for forming semiconductor chip and electronic module with integrated surface interconnects/components | Electricity | 53 | Expired |
| US7781781B2 | CMOS imager array with recessed dielectric | Electricity | 50 | Active |
| US4944682A | Method of forming borderless contacts | Electricity | 32 | Expired |
| US7335577B2 | Crack stop for low K dielectrics | Electricity | 31 | Expired |
| US5731246A | Protection of aluminum metallization against chemical attack during photoresist development | Emerging Cross-Sectional Technologies | 26 | Expired |
| US7015150B2 | Exposed pore sealing post patterning | Electricity | 23 | Expired |
| US5384281A | Non-conformal and oxidizable etch stops for submicron features | Emerging Cross-Sectional Technologies | 20 | Expired |
| US7884475B2 | Conductor structure including manganese oxide capping layer | Electricity | 20 | Active |
| US7521336B2 | Crack stop for low K dielectrics | Electricity | 19 | Active |
| US5480748A | Protection of aluminum metallization against chemical attack during photoresist development | Emerging Cross-Sectional Technologies | 19 | Expired |
| US6251787A | Elimination of photo-induced electrochemical dissolution in chemical mechanical polishing | Electricity | 19 | Expired |
| US5486267A | Method for applying photoresist | Emerging Cross-Sectional Technologies | 16 | Expired |
| US8013342B2 | Double-sided integrated circuit chips | Electricity | 16 | Active |
| US7361989B1 | Stacked imager package | Electricity | 14 | Active |
| US6426557B1 | Self-aligned last-metal C4 interconnection layer for Cu technologies | Electricity | 13 | Expired |
| US8232190B2 | Three dimensional vertical E-fuse structures and methods of manufacturing the same | Electricity | 13 | Active |
| US7670927B2 | Double-sided integrated circuit chips | Electricity | 12 | Active |
| US8546240B2 | Methods of manufacturing integrated semiconductor devices with single crystalline beam | Electricity | 7 | Active |
| US7521798B2 | Stacked imager package | Electricity | 6 | Active |
| US6504203B2 | Method of forming a metal-insulator-metal capacitor for dual damascene interconnect processing and the device so formed | Emerging Cross-Sectional Technologies | 5 | Expired |
| US8284017B2 | Structure having substantially parallel resistor material lengths | Physics | 5 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.